808nm Laser Epiwafer

808nm Laser Epiwafer The 808nm laser epiwafer adopts AlGaAs multiple quantum-Well as the active layer.  The Maximum output power for fabricated laser can be 1mW.  Good uniformity of wavelength around 2’’ wafer can be achieved. Device Performance:  Characteristics  Symbol  Conditions  Typical Value  Threshold Current  Ith  without coating  <150 mA  Operating Current  IOP  @250mW  546 mA […]